L. Latorre, V. Beroulle, Y. Bertrand, P. Nouet, I. Salesse
{"title":"Micromachined CMOS magnetic field sensor with ferromagnetic actuation","authors":"L. Latorre, V. Beroulle, Y. Bertrand, P. Nouet, I. Salesse","doi":"10.1117/12.382280","DOIUrl":null,"url":null,"abstract":"In this paper we intend to introduce a new magnetic field sensor. The sensing principle is based on the deformation of a mechanical structure due to magnetic forces, using ferromagnetic materials. Thus the sensor can be classified in the passive sensor category and exhibits very low power consumption, only due to conditioning circuit. The sensor is designed for monolithic integration with CMOS electronics. Post-process fabrication steps are described and experimental results, obtained on a torsion structure are shown. The sensitivity of this new sensor compares with that of highly sensitive Hall plates. A simple analytical model is finally given and turned into analog VHDL description in order to fully integrate the sensor in the standard microelectronic design flow.","PeriodicalId":318748,"journal":{"name":"Design, Test, Integration, and Packaging of MEMS/MOEMS","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Design, Test, Integration, and Packaging of MEMS/MOEMS","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.382280","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
In this paper we intend to introduce a new magnetic field sensor. The sensing principle is based on the deformation of a mechanical structure due to magnetic forces, using ferromagnetic materials. Thus the sensor can be classified in the passive sensor category and exhibits very low power consumption, only due to conditioning circuit. The sensor is designed for monolithic integration with CMOS electronics. Post-process fabrication steps are described and experimental results, obtained on a torsion structure are shown. The sensitivity of this new sensor compares with that of highly sensitive Hall plates. A simple analytical model is finally given and turned into analog VHDL description in order to fully integrate the sensor in the standard microelectronic design flow.