N-MOSFETs with inversion-layer source/drain extensions formed by cesium segregation at SiO2/Si interfaces

Abstract

We fabricated a novel type MOSFET with inversion layer source/drain extensions formed by Cs implantation and segregation at SiO2/Si interfaces beside the gate and demonstrate that it has significant immunity to short channel effect, gate induced drain leakage, and transient enhanced diffusion of channel boron impurities, compared to conventional MOSFETs. The stability of Cs in the device is also confirmed by bias-temperature-stress measurements.