{"title":"A 1V 830μW full-band ZigBee receiver front-end with current-reuse and Gm-boosting techniques","authors":"Zengqi Wang, Zhiqun Li","doi":"10.1109/NEWCAS.2015.7182015","DOIUrl":null,"url":null,"abstract":"A low-voltage low-power CMOS ZigBee receiver front-end supporting 780/868/915/2400MHz bands is presented in this paper. The wideband common-gate (CG) low noise amplifier (LNA) and the I/Q current-commutating mixer are merged in a single circuit, sharing the bias current. Active trans-conductance (gm) boosting technique is utilized in the design of the presented receiver front-end. The topology and optimization method of the presented front-end are shown. Post-layout simulation results for 180nm RF CMOS implementations show the conversion gain is 26.5dB at 780/868/915MHz bands and 19.5dB at 2400MHz band. The minimum simulated NF is 6.5dB. The receiver front-end consumes 830μW from a 1V DC supply and the active size of core circuit is 0.0276mm2.","PeriodicalId":404655,"journal":{"name":"2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS)","volume":"139 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NEWCAS.2015.7182015","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
A low-voltage low-power CMOS ZigBee receiver front-end supporting 780/868/915/2400MHz bands is presented in this paper. The wideband common-gate (CG) low noise amplifier (LNA) and the I/Q current-commutating mixer are merged in a single circuit, sharing the bias current. Active trans-conductance (gm) boosting technique is utilized in the design of the presented receiver front-end. The topology and optimization method of the presented front-end are shown. Post-layout simulation results for 180nm RF CMOS implementations show the conversion gain is 26.5dB at 780/868/915MHz bands and 19.5dB at 2400MHz band. The minimum simulated NF is 6.5dB. The receiver front-end consumes 830μW from a 1V DC supply and the active size of core circuit is 0.0276mm2.