Oxygen-sensing characteristics of nanostructured Al-doped ZnO thin films

Abstract

Nanostructured Aluminium (Al) doped Zinc Oxide (ZnO) was prepared by sol-gel spin-coating method to fabricate ZnO-based sensors. The oxygen-sensing characteristics were studied by varying the gas flow rate at room temperature. The electrical and structural properties of the films were carried out using current-voltage (IV) measurement, Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscopy (FESEM), respectively. The porous nanostructures exhibited good sensitivity, of 73%, in the presence of 50 sccm of O2 flow rate. From this study, it is known that, ZnO thin film that was observed to have porous structure might enhance gas sensing performance.