1200V class reverse blocking IGBT (RB-IGBT) for AC matrix converter

Abstract

This paper presents a novel 1200 V RB-IGBT for an AC matrix converter. The 1200 V RB-IGBT is made by a deep diffusion isolation process and thin wafer process technology. Our fabricated RB-IGBT achieved more than 1200 V reverse blocking capability and the same forward voltage drop Vce(sat) and turn-off energy loss Eoff characteristics as our previous punch through type (PT-type) third generation IGBT. Therefore, it is possible to reduce the total loss in the AC matrix converter operation compared with the conventional IGBT and diode coupling.