Design Analysis and Comparative Study of GDI Based Full Adder Design

Harsh Yadav, Amit Kumar Goyal, Ajay Kumar
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引用次数: 1

Abstract

In this paper, a 1-bit full adder is implemented using the Gate-Diffusion-Input (GDI) technique and its design analysis is carried out. The design parameters such as delay, power consumption, energy delay product, energy and transistor count are compared with the conventional static CMOS based design. The effect of parasitic capacitance is analyzed via post layout simulation. This reveals that the delay and power consumption of the GDI adder is around 19% and 94% less than to that of CMOS based approach along with reduced number of transistor count.
基于GDI的全加法器设计分析与比较研究
本文采用门扩散输入(GDI)技术实现了一个1位全加法器,并对其进行了设计分析。设计参数如延迟、功耗、能量延迟积、能量和晶体管数与传统的静态CMOS设计进行了比较。通过布局后仿真分析了寄生电容的影响。这表明GDI加法器的延迟和功耗比基于CMOS的方法分别减少了19%和94%,同时减少了晶体管数量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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