Ion channelling and Raman scattering study of self-implanted silicon

Abstract

Ion channeling and Raman spectroscopy techniques were used to investigate ion-beam damage created by implantation of 245 keV and 5.5 MeV Si/sup +/ into Si(100). The two techniques employed in this work are compared and are shown to be complimentary with Raman scattering being more sensitive to low damage concentrations. The spatial correlation model is also discussed.