G. Thakar, S. Madan, C. Garza, W.L. Krisa, P. Nicollian, J.L. Wise, C. Lee, J. McKee, A. Appel, A. Esquivel, V.M. McNeil, D. Prinslow, B. Riemenschneider, T. Utsumi, R. Eklund, R. Chapman
{"title":"High performance 0.3 /spl mu/m CMOS using I-line lithography and BARC","authors":"G. Thakar, S. Madan, C. Garza, W.L. Krisa, P. Nicollian, J.L. Wise, C. Lee, J. McKee, A. Appel, A. Esquivel, V.M. McNeil, D. Prinslow, B. Riemenschneider, T. Utsumi, R. Eklund, R. Chapman","doi":"10.1109/VLSIT.1995.520865","DOIUrl":null,"url":null,"abstract":"TiN or organic Bottom AntiReflection Coatings (BARC), polysilicon hammerheads, phase shift masks, quadrupole off-axis illumination I-line lithography at N.A.=0.60, shallow source/drain extenders, LOCOS isolation, and 6 nm gate oxide are used to obtain high performance 0.30 /spl mu/m 2.5 V CMOS with effective channel lengths <0.20 /spl mu/m. The use of BARC reduces off current and improves PMOS hot carrier reliability.","PeriodicalId":328379,"journal":{"name":"1995 Symposium on VLSI Technology. Digest of Technical Papers","volume":"78 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 Symposium on VLSI Technology. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1995.520865","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
TiN or organic Bottom AntiReflection Coatings (BARC), polysilicon hammerheads, phase shift masks, quadrupole off-axis illumination I-line lithography at N.A.=0.60, shallow source/drain extenders, LOCOS isolation, and 6 nm gate oxide are used to obtain high performance 0.30 /spl mu/m 2.5 V CMOS with effective channel lengths <0.20 /spl mu/m. The use of BARC reduces off current and improves PMOS hot carrier reliability.
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