Impact of temperature on the performance of sub-35nm symmetric Double Gate Junctionless Transistor based inverter using High-K gate dielectric, a TCAD simulation study

Abstract

In this paper, the effect High Temperature on the performance of a symmetric double gate junctionless transistor based inverter is analyzed. 3D simulations are performed using COGENDA 3D TCAD tool to investigate its switching characteristics, voltage transfer characteristics, output current and noise margin at different temperatures. High-K gate dielectric material (HFO2) is used as the gate oxide to achieve improved device characteristics and hence the inverter performance.