A low thermal budget, fully self-aligned lateral BJT on thin film SOI substrate for low power BiCMOS applications

Abstract

A novel SDE LBJT on TFSOI substrate has been demonstrated. The fabrication process is self-aligned, with a minimum thermal budget, and is fully compatible with an SOI CMOS process. Good electrical results were obtained. The devices are expected to have good current drive and high frequency performance for low power applications.