GeSn N-FinFETs and NiGeSn contact formation by phosphorus implant

Abstract

We report n-FinFETs with a high drive current of 108 Aim and the best SS of 138 mV/dec. A higher drive current was achieved by the reduction of series S/D resistance. NiGeSn/n⁺-GeSn contact formation was done by rapid thermal annealing below 400 °C. Contact resistivity was characterized by circular transmission line model. The contact resistance decreases with the carrier concentration or Sn fraction in GeSn films with the lowest contact resistivity of 3.8×10⁻⁸ Ω-cm².