N. Miura, D. Mizoguchi, M. Inoue, K. Niitsu, Y. Nakagawa, M. Tago, M. Fukaishi, T. Sakurai, T. Kuroda
{"title":"A 1Tb/s 3W inductive-coupling transceiver for inter-chip clock and data link","authors":"N. Miura, D. Mizoguchi, M. Inoue, K. Niitsu, Y. Nakagawa, M. Tago, M. Fukaishi, T. Sakurai, T. Kuroda","doi":"10.1109/ISSCC.2006.1696223","DOIUrl":null,"url":null,"abstract":"A 1Tb/s 3W inter-chip transceiver transmits clock and data by inductive coupling at a clock rate of 1GHz and data rate of 1Gb/s per channel. 1024 data transceivers are arranged with a pitch of 30mum. The total layout area is 2mm2 in 0.18mum CMOS and the chip thickness is 10mum. 4-phase TDMA reduces crosstalk and the BER is <10minus;12. Bi-phase modulation is used to improve noise immunity, reducing power in the transceiver","PeriodicalId":166617,"journal":{"name":"2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers","volume":"76 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"61","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2006.1696223","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 61
Abstract
A 1Tb/s 3W inter-chip transceiver transmits clock and data by inductive coupling at a clock rate of 1GHz and data rate of 1Gb/s per channel. 1024 data transceivers are arranged with a pitch of 30mum. The total layout area is 2mm2 in 0.18mum CMOS and the chip thickness is 10mum. 4-phase TDMA reduces crosstalk and the BER is <10minus;12. Bi-phase modulation is used to improve noise immunity, reducing power in the transceiver