Excitons in III-V strained marginal systems: dispersion relations and absorption processes

Abstract

The authors have investigated theoretically the optical properties of strained (001) GaAs-(Ga,In)As simple quantum wells with a high Indium content ({approximately}35%). Due to the band offset, the e{sub 1}lh{sub 1} transition is marginally type I for x > 25% and type II otherwise. They calculate the exciton parameters within a model that includes the attractive potential created by the condensed electron wavefunction on the marginal light hole one. The influence of the electric field on the valence wavefunctions away from k = 0 is also studied.