A High Efficiency High Power Density Harmonic-Tuned Ka Band Stacked-FET GaAs Power Amplifier

2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI:10.1109/CSICS.2016.7751020

Duy P. Nguyen, T. Pham, B. Pham, A. Pham

引用次数: 15

Abstract

A stacked-FET power amplifier (PA) with harmonic- tuned output matching network is demonstrated using a 0.15-μm Gallium Arsenide (GaAs) technology. The fabricated PA exhibits 28.5 dBm output power, 12 dB gain and 38.4% power added efficiency (PAE). To the best of our knowledge, this is for the first time stacked-FET technique is used in combining with harmonic-tuned output network to achieve high PAE and high power density simultaneously in a GaAs PA.

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一种高效率高功率密度谐波调谐Ka波段叠置场效应晶体管GaAs功率放大器

采用0.15 μm砷化镓(GaAs)技术，设计了一种谐波调谐输出匹配网络的叠置场效应管功率放大器。该放大器的输出功率为28.5 dBm，增益为12 dB，功率附加效率(PAE)为38.4%。据我们所知，这是第一次将堆叠fet技术与谐波调谐输出网络相结合，在GaAs PA中同时实现高PAE和高功率密度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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