RF overdrive experiments on 0.5 /spl mu/m power pHEMTs

Abstract

The effect of large signal drive on long-term device reliability was investigated on M/A-COM 0.5 /spl mu/m power pHEMTs with 600 /spl mu/m gate periphery by stressing devices on-wafer at normal gate and accelerated drain bias conditions with various RF input drives in the high compression regime (RF overdrive condition). Complete DC characterization and input/output power measurements were performed every 5 minutes during the stress.