Exact algorithms for coupling capacitance minimization by adding one metal layer

Hua Xiang, Kai-Yuan Chao, Martin D. F. Wong
{"title":"Exact algorithms for coupling capacitance minimization by adding one metal layer","authors":"Hua Xiang, Kai-Yuan Chao, Martin D. F. Wong","doi":"10.1109/ISQED.2005.55","DOIUrl":null,"url":null,"abstract":"Due to the rapid development of manufacturing process technology and tight marketing schedules, chip design and manufacturing always work towards an integrated solution to achieve an enhanced product for fast time-to-market and higher niche profit. For high-end \"high-volume\" products, one good option for further improving chip performance is to add extra metal layers based on an existing design after all easy circuit fixes and process tricks have been applied. This strategy has been applied by the main integrated device manufacturers. In contrast to most low volume ASIC, the additional metal layer cost is low due to cost averaging over huge volumes. We address the NLM (new layer migration) problem which eliminates coupling capacitance violations for speed push in a given routing solution by migrating some wire segments to a metal layer newly inserted under the commonly used metal filling post process for manufacturability and coupling control. We first propose an exact linear-time algorithm to judge whether a feasible solution exists or not. Then we present a provably optimal algorithm to eliminate as many coupling violations as possible. At the same time, the total coupling capacitance on both metal layers is minimized. For n wire segments, the time complexity of the algorithm is O(n/sup 3/2/log(n)). Finally, an LP approach is presented as post processing to adjust segment positions when the two layers have layer-dependent design spacing rules.","PeriodicalId":333840,"journal":{"name":"Sixth international symposium on quality electronic design (isqed'05)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Sixth international symposium on quality electronic design (isqed'05)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED.2005.55","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Due to the rapid development of manufacturing process technology and tight marketing schedules, chip design and manufacturing always work towards an integrated solution to achieve an enhanced product for fast time-to-market and higher niche profit. For high-end "high-volume" products, one good option for further improving chip performance is to add extra metal layers based on an existing design after all easy circuit fixes and process tricks have been applied. This strategy has been applied by the main integrated device manufacturers. In contrast to most low volume ASIC, the additional metal layer cost is low due to cost averaging over huge volumes. We address the NLM (new layer migration) problem which eliminates coupling capacitance violations for speed push in a given routing solution by migrating some wire segments to a metal layer newly inserted under the commonly used metal filling post process for manufacturability and coupling control. We first propose an exact linear-time algorithm to judge whether a feasible solution exists or not. Then we present a provably optimal algorithm to eliminate as many coupling violations as possible. At the same time, the total coupling capacitance on both metal layers is minimized. For n wire segments, the time complexity of the algorithm is O(n/sup 3/2/log(n)). Finally, an LP approach is presented as post processing to adjust segment positions when the two layers have layer-dependent design spacing rules.
通过添加一个金属层来最小化耦合电容的精确算法
由于制造工艺技术的快速发展和紧凑的营销时间表,芯片设计和制造始终朝着集成解决方案的方向努力,以实现更快的产品上市时间和更高的利基利润。对于高端“大批量”产品,进一步提高芯片性能的一个好选择是在所有简单的电路修复和工艺技巧应用后,在现有设计的基础上增加额外的金属层。这一策略已被主要的集成设备制造商所采用。与大多数小批量ASIC相比,由于在大批量上平均成本,额外的金属层成本很低。我们解决了NLM(新层迁移)问题,该问题通过将一些线段迁移到新插入的金属层上来消除给定布线解决方案中速度推进的耦合电容违规,该金属层是在通常使用的金属填充后处理下插入的,用于可制造性和耦合控制。我们首先提出了一个精确的线性时间算法来判断是否存在可行解。然后,我们提出了一个可证明的最优算法,以消除尽可能多的耦合违规。同时,两个金属层上的总耦合电容最小。对于n个线段,算法的时间复杂度为O(n/sup 3/2/log(n))。最后,提出了一种LP方法作为后处理,当两层具有层相关的设计间距规则时,可以调整段的位置。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信