A novel simulation method for oxynitridation and re-oxidation

Abstract

We proposed a novel model to enable accurate and practical simulations for a growth of oxynitride film on a Si substrate. In the growth of the oxynitride film, oxidation of the Si surface and the incorporation of nitrogen atoms in the oxynitride film occur simultaneously. Due to the nitrogen atoms in the oxynitride film, the growth rate of the oxynitride film is quite different from that of SiO/sub 2/ film. We extended an oxidant diffusion model that depends on the nitrogen concentration in the oxynitride film. In this model, the oxidant diffusivity is a function of the nitrogen concentration. We apply the model to the simulations of several oxynitride processes and re-oxidation of the oxynitride films. The simulation results show good agreement with experimental results.