R. Nagarajan, M. Diwan, P. Awasthi, A. Shukla, P. Sharma, M. Goodson, S. Awad
{"title":"Optimization of Ultrasonic Cleaning for Erosion-Sensitive Microelectronic Components","authors":"R. Nagarajan, M. Diwan, P. Awasthi, A. Shukla, P. Sharma, M. Goodson, S. Awad","doi":"10.1109/ASMC.2006.1638750","DOIUrl":null,"url":null,"abstract":"In this paper, we describe an experimental study undertaken to investigate ultrasonic fields in the frequency range 58-192 kHz with respect to their surface cleaning and erosion potential. Measurements are performed using three different methods - gravimetric weight-loss, surface profilometry, and precision turbidimetry - to assess these mechanisms for a variety of materials, including semiconductors. Conclusions are drawn regarding the nature of interaction between high-frequency, high-intensity ultrasonic fields and immersed surfaces. Recommendations are provided for optimal settings to maximize surface cleanability and minimize erodibility of sensitive substrates","PeriodicalId":407645,"journal":{"name":"The 17th Annual SEMI/IEEE ASMC 2006 Conference","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 17th Annual SEMI/IEEE ASMC 2006 Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC.2006.1638750","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
Abstract
In this paper, we describe an experimental study undertaken to investigate ultrasonic fields in the frequency range 58-192 kHz with respect to their surface cleaning and erosion potential. Measurements are performed using three different methods - gravimetric weight-loss, surface profilometry, and precision turbidimetry - to assess these mechanisms for a variety of materials, including semiconductors. Conclusions are drawn regarding the nature of interaction between high-frequency, high-intensity ultrasonic fields and immersed surfaces. Recommendations are provided for optimal settings to maximize surface cleanability and minimize erodibility of sensitive substrates