{"title":"Future high density memories for computing applications: Device behavior and modeling challenges","authors":"G. Spadini, I. Karpov, D. Kencke","doi":"10.1109/SISPAD.2010.5604521","DOIUrl":null,"url":null,"abstract":"Memory elements existing and under research are compared for their suitability in computer memory applications. Cross point arrays of phase change elements with matched isolation devices are found to be particularly attractive and the challenge to model them is analyzed.","PeriodicalId":331098,"journal":{"name":"2010 International Conference on Simulation of Semiconductor Processes and Devices","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Conference on Simulation of Semiconductor Processes and Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2010.5604521","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
Memory elements existing and under research are compared for their suitability in computer memory applications. Cross point arrays of phase change elements with matched isolation devices are found to be particularly attractive and the challenge to model them is analyzed.