One-port active polysilicon resonant microstructures

M. W. Putty, S. Chang, R. Howe, A. Robinson, K. D. Wise
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引用次数: 41

Abstract

Theoretical and experimental characteristics of a two-terminal, or one-port, resonant microstructure are discussed. An equivalent circuit model that is useful for design and analysis of these devices is presented. This model is verified by experimental measurements, with a worst-case error between model and experimental parameters of 30%. A process for integrating polysilicon resonant microstructures with on-chip NMOS (N-metal oxide semiconductor) circuitry is also described. A novel feature of this process is the use of rapid thermal annealing (RTA) for strain-relief of the non-implanted phosphorus-doped polysilicon. The RTA-strain-relieved polysilicon has a Young's modulus of 0.9.10/sup 12/ dynes/cm/sup 2/ and residual strain of 0.002% as measured by resonant frequency techniques. This low value of strain indicated that RTA is a useful strain-relief technique.<>
单端有源多晶硅谐振微结构
讨论了双端或单端谐振微结构的理论和实验特性。提出了一种等效电路模型,可用于这些器件的设计和分析。该模型经实验验证,模型与实验参数的最坏情况误差为30%。还描述了将多晶硅谐振微结构与片上NMOS (n-金属氧化物半导体)电路集成的工艺。该工艺的一个新特点是使用快速热退火(RTA)来消除非植入的掺磷多晶硅的应变。通过谐振频率技术测量,rta应变解除多晶硅的杨氏模量为0.9.10/sup 12/ dynes/cm/sup 2/,残余应变为0.002%。这种低应变值表明RTA是一种有效的应变缓解技术。
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