M. W. Putty, S. Chang, R. Howe, A. Robinson, K. D. Wise
{"title":"One-port active polysilicon resonant microstructures","authors":"M. W. Putty, S. Chang, R. Howe, A. Robinson, K. D. Wise","doi":"10.1109/MEMSYS.1989.77962","DOIUrl":null,"url":null,"abstract":"Theoretical and experimental characteristics of a two-terminal, or one-port, resonant microstructure are discussed. An equivalent circuit model that is useful for design and analysis of these devices is presented. This model is verified by experimental measurements, with a worst-case error between model and experimental parameters of 30%. A process for integrating polysilicon resonant microstructures with on-chip NMOS (N-metal oxide semiconductor) circuitry is also described. A novel feature of this process is the use of rapid thermal annealing (RTA) for strain-relief of the non-implanted phosphorus-doped polysilicon. The RTA-strain-relieved polysilicon has a Young's modulus of 0.9.10/sup 12/ dynes/cm/sup 2/ and residual strain of 0.002% as measured by resonant frequency techniques. This low value of strain indicated that RTA is a useful strain-relief technique.<<ETX>>","PeriodicalId":369505,"journal":{"name":"IEEE Micro Electro Mechanical Systems, , Proceedings, 'An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots'","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"41","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Micro Electro Mechanical Systems, , Proceedings, 'An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots'","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMSYS.1989.77962","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 41
Abstract
Theoretical and experimental characteristics of a two-terminal, or one-port, resonant microstructure are discussed. An equivalent circuit model that is useful for design and analysis of these devices is presented. This model is verified by experimental measurements, with a worst-case error between model and experimental parameters of 30%. A process for integrating polysilicon resonant microstructures with on-chip NMOS (N-metal oxide semiconductor) circuitry is also described. A novel feature of this process is the use of rapid thermal annealing (RTA) for strain-relief of the non-implanted phosphorus-doped polysilicon. The RTA-strain-relieved polysilicon has a Young's modulus of 0.9.10/sup 12/ dynes/cm/sup 2/ and residual strain of 0.002% as measured by resonant frequency techniques. This low value of strain indicated that RTA is a useful strain-relief technique.<>