Observation of suppressed dark current of Ge on Si (100) using ultrathin Ge seed layer

Abstract

In this study, we investigated the effect of the Ge LT layer thickness in HT/LT 2-step Ge growth on the I-V characteristics. Even the ultrathin 5-nm-thick LT layer could lower the dark current caused by the defects due to the effective defect termination between Ge/Si interfaces.