Electrical and pH sensing characteristics of Si nanowire-based suspended FET biosensors

Abstract

The dependence of nanowire width on the stiction-free structure and the influence of stiction on the electrical performance in the suspended nanowire (NW-SUS) ion-sensitive field-effect transistors (ISFETs) are investigated. The NW-SUS ISFETs without stiction are successfully fabricated using advanced microfabrication technology. The stiction-free NW-SUS ISFETs exhibit excellent electrical characteristics due to gate-all-around (GAA) structure. Furthermore, the stiction- free NW-SUS ISFETs show higher sensitivity in pH sensing, compared to the conventional devices. These investigations provide an opportunity for developing sensor platform with high sensitivity in the future.