A high speed pipeline ADC with 78-dB SFDR in 0.18 um BiCMOS

Jie Sun, Jianhui Wu
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引用次数: 5

Abstract

a 12 bit 300 MS/s ADC with 78-dB SFDR in 0.18um SiGe BiCMOS process is presented. Such ADC consumes 170 mW under the supply of 1.9V. To improve the power efficiency and settling accuracy, the ADC employs a novel residue amplifier (RA). In addition, it includes a clock buffer to generate the low jitter clock from the signal source outside the chip. Reference buffer is fully integrated to provide stable differential reference voltages with little noise. A low power comparator with fast response and modest offset is also presented. The simulation results show that with Nyquist input, the SFDR is 78 dB and the ENOB is 10.9 bit.
在0.18 um BiCMOS中具有78 db SFDR的高速流水线ADC
提出了一种基于0.18um SiGe BiCMOS工艺的78 db SFDR的12位300 MS/s ADC。该ADC在1.9V电压下功耗为170 mW。为了提高功率效率和沉降精度,该ADC采用了一种新型的残余放大器(RA)。此外,它还包括一个时钟缓冲器,用于从芯片外部的信号源产生低抖动时钟。参考缓冲器完全集成,提供稳定的差分参考电压,噪声小。提出了一种响应速度快、偏移量适中的低功耗比较器。仿真结果表明,在Nyquist输入下,SFDR为78 dB, ENOB为10.9 bit。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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