A Study of MIS - AlGaN/GaN HEMTs with SiO/sub 2/ Films as Gate Insulator

Abstract

Gate insulator formation methods for GaN based MIS-HEMTs were examined. A SiO2 film formed with the HTO deposition method (HTO film) showed excellent properties. The interface state density of the HTO/GaN structure was 2E11 eV -1 cm -2 and the breakdown field was 8.2 MV/cm. MIS-AlGaN/GaN HEMTs were fabricated using the HTO film. A MIS-HEMT with a gate width of 100Pm was characterized by a maximum drain current of 395 mA/mm and a specific on-resistance of 1.7 m:� cm 2 . A high power MIS-HEMT with a gate width of 31.04 mm showed a maximum drain current of more