ELFR experiment test verifying anomaly of nano-DRAM products in W-plug process

Chiao-Lo Chiang, Mu-Chun Wang, Yu-Min Chung, Chung-Ming Chu, Shou-Kong Fan, Chin-Chia Kuo, I-Shan Yen
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引用次数: 2

Abstract

Early-life failure-rate (ELFR) test is a useful gauge to screen out the harmful or latent-defect memory products. In nano-regime, this test is still suitable to be applied on these kinds of memory products. Through this reliability test, some gap-filling quality with W-plug in via or contact structure is not compact well, causing the degradation in electrical characteristics and deteriorating the function operation with Shmoo function tester. Using the failure analysis skill, this failure mode was located and identified.
ELFR实验验证了纳米dram产品在W-plug工艺中的异常
早期寿命失效率(ELFR)测试是筛选有害或潜在缺陷记忆产品的有效手段。在纳米范围内,该测试仍然适用于这类存储产品。通过本次可靠性试验,发现w型插头的过孔或触点结构填充质量不够紧凑,导致电气特性下降,影响了Shmoo功能测试仪的功能运行。利用失效分析技术,对该失效模式进行了定位和识别。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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