AREA-Time Efficient Addition in Charge Based Technology

R. Montoye
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引用次数: 9

Abstract

Using the model developed by Mead and Conway for charge based technology, a methodology for the production of area-time efficient adders which imbeds the buffering required to drive large loads caused by the carry-lookahead tree has been developed. This methodology can be used to produce an 0(logN) time and 0(NlogN) area layout. Additionally, an algorithm was written to produce minimal silicon area layouts for a given time bound. This algorithm involves optimization at both the cellular level and the layout level in an iterative fashion to allow the relevant technological parameters to play a role in the cellular design phase. Results of the algorithm including examples and an area-time curve for a 48 bit adder using typical 5 micron NMOS [MeCo80] are displayed.
基于电荷的区域-时间效率加法技术
利用Mead和Conway为基于电荷的技术开发的模型,开发了一种生产区域-时间高效加法器的方法,该方法嵌入了驱动由超前采油树引起的大负载所需的缓冲。该方法可用于生成0(logN)时间和0(NlogN)区域布局。此外,还编写了一种算法,以在给定的时间范围内产生最小的硅面积布局。该算法以迭代的方式在单元级和布局级进行优化,使相关的技术参数在单元设计阶段发挥作用。给出了算法的结果,包括实例和典型5微米NMOS [MeCo80] 48位加法器的面积-时间曲线。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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