SiC MOSFET bi-directional switch IMS module design

Abstract

This paper presents the design and proof of concept validation of an integrated SiC MOSFET bidirectional switch, aiming to deliver high electro-thermal and electro-magnetic performance, while remaining commercially viable for large-volume applications. The focus is on enabling a high degree of system-level modularity by an integration effort targeted specifically at a single Bi-Directional Switch. Unlike conventional power modules, this work employs Insulated Metal Substrate technology, using copper and aluminum for interconnection without specific die finishes and without the need for ceramic substrates. The design is validated using specialist computer-aided design methodologies and tools for both electro-magnetic and electro-thermal performance. A prototype is manufactured, characterized and tested.