On "pure self-heating effect" of MOSFET in SOI

Abstract

The electrothermal simulation of high-voltage MOSFET in thin SOI for self-heating effects is performed by means of MIDICI, a commercial 2-D numerical simulator. By varying the thermal conductivity of the buried oxide, we can extract the self-heating effects merely from the great rise in thermal resistance of the substrate, which are defined as the pure self-heating effect. The pure self-heating in SOI MOSFET is also presented for universality of the concept.