Design and implementation of word-parallel digital associative memories

Y. Oike, M. Ikeda, K. Asada
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引用次数: 1

Abstract

We present word-parallel digital associative memories with exact Hamming/Manhattan distance computation. A logic-in-memory digital implementation achieves the word-parallel and hierarchical search architecture. It attains a high-speed operation with a large input number, and detects the data close to the input with a fewer number of clocks. The circuit implementation allows unlimited data capacity and achieves a low-voltage operation under 1.0 V for system-on-a-chip applications. The capacity scalability makes it easy to compute a function of Manhattan distance evaluation using thermometer encoding. We have designed 64-bit 32-word associative memories using a 1P5M 0.18 /spl mu/m CMOS process. It achieves 411.5 MHz and 40.0 MHz operations at a supply voltage of 1.8 V and 0.75 V, respectively.
字并行数字联想存储器的设计与实现
我们提出了具有精确汉明/曼哈顿距离计算的字并行数字联想记忆。一个内存逻辑数字实现实现了字并行和分层搜索架构。它以大的输入数实现高速运算,并以较少的时钟数检测接近输入的数据。该电路实现允许无限的数据容量,并为片上系统应用实现1.0 V以下的低电压操作。容量的可扩展性使得使用温度计编码计算曼哈顿距离评估函数变得容易。我们采用1P5M 0.18 /spl mu/m CMOS工艺设计了64位32字联想存储器。它在1.8 V和0.75 V的电源电压下分别实现411.5 MHz和40.0 MHz的工作。
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