{"title":"Experimental investigation of scalability and transport in In0.7Ga0.3As multi-gate quantum well FET (MuQFET)","authors":"L. Liu, V. Saripalli, V. Narayanan, S. Datta","doi":"10.1109/DRC.2011.5994401","DOIUrl":null,"url":null,"abstract":"Compound semiconductors such as In0.7Ga0.3As and InSb are being actively researched as replacement for silicon channel materials for logic applications due to their superior transport properties [1,2]. Planar III–V quantum-well FETs have already demonstrated with superior performance than the state-of-the art Si MOSFETs for low supply voltage (Vcc) applications [1–3]. A key research challenge remains in addressing the scalability of III-V based quantum-well FETs to sub-14 nm node logic applications while still maintaining their excellent transport advantage. In this study, we demonstrate quasi-ballistic operation of non-planar, multi-gate, modulation doped, strained In0.7Ga0.3As quantum well FET (MuQFET), combining the electrostatic robustness of multi-gate configuration with the excellent electron mobility of high mobility quantum well channel, In0.7Ga0.3As (Figure 1).","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"69th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2011.5994401","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Compound semiconductors such as In0.7Ga0.3As and InSb are being actively researched as replacement for silicon channel materials for logic applications due to their superior transport properties [1,2]. Planar III–V quantum-well FETs have already demonstrated with superior performance than the state-of-the art Si MOSFETs for low supply voltage (Vcc) applications [1–3]. A key research challenge remains in addressing the scalability of III-V based quantum-well FETs to sub-14 nm node logic applications while still maintaining their excellent transport advantage. In this study, we demonstrate quasi-ballistic operation of non-planar, multi-gate, modulation doped, strained In0.7Ga0.3As quantum well FET (MuQFET), combining the electrostatic robustness of multi-gate configuration with the excellent electron mobility of high mobility quantum well channel, In0.7Ga0.3As (Figure 1).