Si-Based Technologies for mmWave Automotive Radar

2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI:10.1109/CSICS.2016.7751064

J. John, J. Kirchgessner, R. Ma, D. Morgan, I. To, V. Trivedi

引用次数: 8

Abstract

Continued advancements in Si-based technologies - in particular SiGe BiCMOS technologies - have enabled mmWave integrated circuits designed for 77GHz automotive radar systems to reach production-level maturity. This paper will discuss the technology requirements for mmWave automotive radar products, and also present the evolution of the respective key figures of merit. Si-based CMOS challenges and opportunities will also be discussed.

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毫米波汽车雷达的si基技术

硅基技术的持续进步，特别是硅基BiCMOS技术，使得为77GHz汽车雷达系统设计的毫米波集成电路达到了生产水平的成熟。本文将讨论毫米波汽车雷达产品的技术要求，并介绍各自关键性能指标的演变。本文还将讨论硅基CMOS面临的挑战和机遇。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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