Influence of argon on field emission from CVD-grown in-plane single-walled carbon nanotube meshes

M. Fontana, Yian Liu, A. Monica, P. Barbara, M. Paranjape
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引用次数: 1

Abstract

The influence of argon (Ar) on the growth of in-plane single-walled carbon nanotube (SWCNTs) meshes using chemical vapor deposition (CVD) was investigated in this study. The SWCNT samples were synthesized using a three-zone furnace (750°C-900°C-750°C) with a methane/hydrogen/argon mixture (total flow of 60 sccm). We verified that the use of argon influences the diameter distribution and the field emission properties of the resulting SWCNTs. The threshold voltage for electron emission was significantly decreased with higher argon concentration due to higher layer conductivity of the samples.
氩气对cvd生长平面内单壁碳纳米管网格场发射的影响
采用化学气相沉积(CVD)技术,研究了氩气(Ar)对平面内单壁碳纳米管(SWCNTs)生长的影响。swcnts样品采用三区炉(750°C-900°C-750°C),甲烷/氢气/氩气混合物(总流量为60 sccm)合成。我们验证了氩气的使用会影响所得SWCNTs的直径分布和场发射性能。随着氩浓度的增加,样品的电导率提高,电子发射的阈值电压显著降低。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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