0.18µm 200V SOI-BCD Technology with Ultra-Low Specific On-Resistance LDMOS for Automotive Application

Abstract

In this work, a new 200V 0.18µm SOI-BCD platform has been developed comprehensively including the wide-SOA n&pLDMOS, low-Ron nLDMOS and LIGBT. It is noted that a ultra-thin N-drift has been skillfully applied below the shallow-trench-isolation (STI) structure for the low-Ron nLDMOS to realize an ultra-low specific on-state resistance (Ron, sp) with 20% decrease than the best reported study and the off-state breakdown voltage (BVoff) is also unsacrificed. Moreover, a linear buffer near the drain side has been arranged in the wide-SOA n&pLDMOS for high on-state breakdown voltage (BVon). Finally, the reliability concerns have been also investigated fully including the negative bias temperature instability (NBTI) for the wide-SOA pLDMOS and hot carrier injection (HCI) for nLDMOS.