Infrared absorption of localized vibrational modes of silicon and beryllium in low temperature molecular beam epitaxial GaAs

Proceedings of the 7th Conference on Semi-insulating III-V Materials, Pub Date : 1992-04-21 DOI:10.1109/SIM.1992.752691

M. O. Manasreh, C. E. Stutz, J. Solomon, M. Mier, R. Kaspi, K. Evans

{"title":"Infrared absorption of localized vibrational modes of silicon and beryllium in low temperature molecular beam epitaxial GaAs","authors":"M. O. Manasreh, C. E. Stutz, J. Solomon, M. Mier, R. Kaspi, K. Evans","doi":"10.1109/SIM.1992.752691","DOIUrl":null,"url":null,"abstract":"The incorporation of silicon donor (SiGa) and beryllium acceptor (BeGa) impurities in molecular beam epitaxial GaAs is studied as a function of growth temperature (Tg) by measuring their localized vibrational modes (LVMs) at 77 K using the infrared absorption technique. The total integrated absorption of the SiGa and BeGa LVMs observed at 383.5 and 482.0 cm/sup -1/, respectively, is decreased as Tg decreases. The SiGa and BeGa LVMs in samples grown at Tg /spl ges/ 350 /spl deg/C are observed only after reducing the free carrier absorption by irradiating the samples with a 2.1 MeV electron beam [doses /spl sim/(5-l0)x10/sup 17/ cm/sup -2/. On the other hand, the secondary ion mass spectrometry (SIMS) show that the densities of Si and Be atoms remain approximately constant as Tg decreases. The reduction of the total integrated absorption of SiGa and BeGa LVMs as Tg is decreased suggests a nonsubstitutional incorporation of these impurities in samples grown at at low temperature.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"606 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1992.752691","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

Abstract

The incorporation of silicon donor (SiGa) and beryllium acceptor (BeGa) impurities in molecular beam epitaxial GaAs is studied as a function of growth temperature (Tg) by measuring their localized vibrational modes (LVMs) at 77 K using the infrared absorption technique. The total integrated absorption of the SiGa and BeGa LVMs observed at 383.5 and 482.0 cm/sup -1/, respectively, is decreased as Tg decreases. The SiGa and BeGa LVMs in samples grown at Tg /spl ges/ 350 /spl deg/C are observed only after reducing the free carrier absorption by irradiating the samples with a 2.1 MeV electron beam [doses /spl sim/(5-l0)x10/sup 17/ cm/sup -2/. On the other hand, the secondary ion mass spectrometry (SIMS) show that the densities of Si and Be atoms remain approximately constant as Tg decreases. The reduction of the total integrated absorption of SiGa and BeGa LVMs as Tg is decreased suggests a nonsubstitutional incorporation of these impurities in samples grown at at low temperature.

查看原文本刊更多论文

低温分子束外延砷化镓中硅和铍局域振动模式的红外吸收

利用红外吸收技术测量了分子束外延砷化镓中硅给体(SiGa)和铍受体(BeGa)杂质在77 K下的局域振动模式(LVMs)，研究了它们的掺入与生长温度(Tg)的关系。分别在383.5和482.0 cm/sup -1/下观察到的SiGa和BeGa lvm的总积分吸收随Tg的减小而减小。在Tg /spl ges/ 350 /spl℃下生长的样品中，只有在用2.1 MeV的电子束[剂量/spl sim/(5- 10)x10/sup 17/ cm/sup -2/]照射样品以降低自由载流子吸收后，才能观察到SiGa和BeGa lvm。另一方面，次级离子质谱分析(SIMS)表明，随着Tg的降低，Si和Be原子的密度基本保持不变。随着Tg的降低，SiGa和BeGa lvm的总积分吸收减少，这表明这些杂质在低温下生长的样品中是非取代性的掺入。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Proceedings of the 7th Conference on Semi-insulating III-V Materials,

自引率

0.00%

发文量