Test algorithms for ECC-based memory repair in nanotechnologies

P. Papavramidou, M. Nicolaidis
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引用次数: 10

Abstract

In modern SoCs embedded memories should be repaired after fabrication to achieve acceptable yield. They should also be protected by ECC against field failures to achieve acceptable reliability. To avoid paying the area and power penalties of both approaches, we can use ECC to fix both fabrication and field failures. However, we show that efficient implementation of this approach may require special diagnosis hardware or new memory test algorithm that exhibit the so-called “single-read double-fault detection” property defined in this paper. We also propose test algorithms satisfying this property.
纳米技术中基于ecc的记忆修复测试算法
在现代soc中,嵌入式存储器应在制造后进行修复,以达到可接受的成品率。它们还应该由ECC保护,防止现场故障,以达到可接受的可靠性。为了避免两种方法的面积和功率损失,我们可以使用ECC来修复制造和现场故障。然而,我们表明,这种方法的有效实现可能需要特殊的诊断硬件或新的内存测试算法,这些算法表现出本文定义的所谓的“单读双故障检测”属性。我们还提出了满足这一性质的测试算法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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