A parallel 32×32 time-to-digital converter array fabricated in a 130 nm imaging CMOS technology

M. Gersbach, Y. Maruyama, E. Labonne, J. Richardson, R. Walker, L. Grant, R. Henderson, F. Borghetti, D. Stoppa, E. Charbon
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引用次数: 81

Abstract

We report on the design and characterization of a 32 × 32 time-to-digital converter (TDC) array implemented in a 130 nm imaging CMOS technology. The 10-bit TDCs exhibit a timing resolution of 119 ps with a timing uniformity across the entire array of less than 2 LSBs. The differential- and integral non-linearity (DNL and INL) were measured at ± 0.4 and ±1.2 LSBs respectively. The TDC array was fabricated with a pitch of 50µm in both directions and with a total TDC area of less than 2000µm2. The characteristics of the array make it an excellent candidate for in-pixel TDC in time-resolved imagers for applications such as 3-D imaging and fluorescence lifetime imaging microscopy (FLIM).
采用130纳米成像CMOS技术制造的平行32×32时间-数字转换器阵列
我们报告了一种采用130 nm成像CMOS技术实现的32 × 32时间-数字转换器(TDC)阵列的设计和特性。10位tdc的时序分辨率为119ps,整个阵列的时序均匀性小于2个lsb。微分非线性和积分非线性(DNL和INL)分别在±0.4和±1.2 LSBs下测量。该TDC阵列在两个方向上的间距均为50µm,总TDC面积小于2000µm2。该阵列的特性使其成为三维成像和荧光寿命成像显微镜(FLIM)等应用的时间分辨成像仪中像素内TDC的优秀候选者。
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