mm W and High Speed Solutions Enabled by FD-SOI

Abstract

This paper will discuss the transistor level and building block characterization of 22-nm FD-SOI CMOS technology in the 25 to 125 oC range over the entire mm-wave frequency band through 325 GHz. Unlike older generation planar bulk CMOS or newer generation FinFET CMOS technologies, FD-SOI benefits from low capacitive parasitics, back-gate control of all DC and mm-wave characteristics, and dielectric isolation between transistors and between the transistor and the silicon substrate. All these features, in combination, along with minimal self-heating and the possibility to use extended source/drain contact stripes and gate pitch to overcome metal electromigration limitations at high temperature, uniquely position 22-nm FD-SOI CMOS to tackle mmwave and ultra-broadband 5G, automotive radar, mm-wave low-power sensor networks as well 56-GBaud and 112-GBaud ADC/DAC-based fibre-optics systems.