FoMPy: A figure of merit extraction tool for semiconductor device simulations

G. Espiñeira, N. Seoane, D. Nagy, G. Indalecio, A. García-Loureiro
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引用次数: 2

Abstract

The aim of this work is to present an efficient tool that extracts the main figures of merit (FoM) of a semiconductors I-V curve and provides useful statistical parameters for variability studies. Two state-of-the-art devices have been used as benchmarks in order to show its capabilities. It includes several methods implemented to obtain the threshold voltage and allows the user to compare the results without compromising them by the methodology used. This study demonstrates the importance of choosing an appropriate method of extraction as the results may vary significantly thus making FoMPy an excellent tool to evaluate a device's performance.
一个用于半导体器件模拟的价值提取工具
这项工作的目的是提出一种有效的工具,可以提取半导体I-V曲线的主要优点(FoM),并为变异性研究提供有用的统计参数。两个最先进的设备被用作基准,以展示其能力。它包括几种实现的方法,以获得阈值电压,并允许用户比较结果,而不影响他们所使用的方法。这项研究证明了选择合适的提取方法的重要性,因为结果可能会有很大的不同,从而使FoMPy成为评估设备性能的优秀工具。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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