A 45-mW 50-Gb/s Linear Shunt LD Driver in 0.5-µm InP HBT Technology

2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI:10.1109/CSICS.2016.7751017

Toshiki Kishi, M. Nagatani, S. Kanazawa, W. Kobayashi, T. Shindo, H. Yamazaki, M. Ida, K. Kurishima, H. Nosaka

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引用次数: 5

Abstract

The transmission capacity of Ethernet has grown rapidly. Advanced multilevel modulation schemes, such as a 4-level pulse amplitude modulation (PAM4), are being investigated as to their suitability for next-generation 400GbE. The demand is now high for a transmitter front-end with a low-power laser diode (LD) driver that is applicable to such multilevel modulations. To meet this demand, we devised a linear shunt LD driver for constructing a low-power transmitter front-end that supports PAM4. The driver was designed and fabricated by using our InP HBT technology (ft = 290 GHz, fmax = 320 GHz). The power dissipation of the driver part is lower than 45 mW at 50 Gb/s. In addition, the power dissipation of the transmitter front-end consisting of the linear shunt LD driver and LD is lower than 226 mW. Our linear shunt LD driver provides linear and high speed operation over 50 Gb/s. In addition, the driver has better power efficiency than any previously reported transmitters based on directly modulated lasers.

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采用0.5µm InP HBT技术的45 mw 50 gb /s线性并联LD驱动器

以太网的传输容量增长迅速。先进的多电平调制方案，如4电平脉冲幅度调制(PAM4)，正在研究其对下一代400GbE的适用性。现在对具有适用于这种多电平调制的低功率激光二极管(LD)驱动器的发射机前端的需求很高。为了满足这一需求，我们设计了一种线性分流LD驱动器，用于构建支持PAM4的低功耗发射器前端。该驱动器采用InP HBT技术(ft = 290 GHz, fmax = 320 GHz)设计和制造。驱动部分在50gb /s时的功耗小于45mw。此外，由线性并联LD驱动器和LD组成的发射机前端功耗低于226 mW。我们的线性并联LD驱动器提供超过50 Gb/s的线性和高速操作。此外，该驱动器具有比以往报道的任何基于直接调制激光器的发射机更好的功率效率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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