Universal integrated PIN photodetector

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850) Pub Date : 2004-11-15 DOI:10.1109/ESSDER.2004.1356561

K. Oberhauser, A. Nemecek, C. Sunder, H. Zimmermann

引用次数: 7

Abstract

The universal PIN photodetector being realisable in CMOS and BiCMOS technology consists of a common cathode and finger anodes embedded in an intrinsic environment, for fast photogenerated-charge-carrier drift. This finger-anode structure, with rise times below 1 ns, and high responsivity in a wavelength range from 400 nm to 850 nm, permits applications: (i) as a two-anode correlation sensor for optical distance measurements and integrated 3D cameras; and (ii) as a photodiode for optical storage systems CD-ROMs as well as red and blue laser DVDs.

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通用集成PIN光电探测器

在CMOS和BiCMOS技术中实现的通用PIN光电探测器由嵌入在固有环境中的公共阴极和手指阳极组成，用于快速光生电荷载流子漂移。这种手指阳极结构，上升时间低于1ns，在400 nm至850 nm的波长范围内具有高响应性，允许应用:(i)作为光学距离测量和集成3D相机的双阳极相关传感器;(ii)用作光存储系统cd - rom以及红色和蓝色激光dvd的光电二极管。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)

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