High performance superjunction UMOSFETs with split p-columns fabricated by multi-ion-implantations

Abstract

We propose superjunction UMOSFET devices (SJ-UMOS) with split p-column structures for automotive applications with rated voltage of 40-75 V. The split p-column fabricated by multi-ion-implantations consists of p-type islands separated by small distances in an n-type epi-layer. This structure was designed to improve the repetitive inductive switching performance without sacrificing the original benefits of the SJ structure. We achieved a specific on-resistance of 28.7 m/spl Omega/mm/sup 2/ at a gate voltage of 10 V for breakdown voltage of 68.0 V. In addition, we confirmed high immunity against inductive switching stress at 175/spl deg/C and good reverse recovery properties.