G. Giacalone, R. Busch, F. Creed, A. Davidovich, S. Divakaruni, C. Drake, C. Ematrudo, J. Fifield, M. Hodges, W. Howell, P. Jenkins, M. Kozyrczak, C. Miller, T. Obremski, C. Reed, G. Rohrbaugh, M. Vincent, T. von Reyn, J. Zimmerman
{"title":"A 1 MB, 100 MHz integrated L2 cache memory with 128b interface and ECC protection","authors":"G. Giacalone, R. Busch, F. Creed, A. Davidovich, S. Divakaruni, C. Drake, C. Ematrudo, J. Fifield, M. Hodges, W. Howell, P. Jenkins, M. Kozyrczak, C. Miller, T. Obremski, C. Reed, G. Rohrbaugh, M. Vincent, T. von Reyn, J. Zimmerman","doi":"10.1109/ISSCC.1996.488721","DOIUrl":null,"url":null,"abstract":"Several cache-DRAMs have been reported, but all require multiple chips to implement an L2 cache system. The advent of 20 ns, 16 Mb DRAM technology has made a high-speed single-chip 1MB cache possible, replacing multiple SRAM and logic modules, saving board space and reducing power. Multichip-module (MCM) packaging further optimizes the electrical characteristics of the processor-cache connection. An in-line level-2 1 MB cache chip that has DRAM density contains high-speed SRAM and MCM technology.","PeriodicalId":162539,"journal":{"name":"1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.1996.488721","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14
Abstract
Several cache-DRAMs have been reported, but all require multiple chips to implement an L2 cache system. The advent of 20 ns, 16 Mb DRAM technology has made a high-speed single-chip 1MB cache possible, replacing multiple SRAM and logic modules, saving board space and reducing power. Multichip-module (MCM) packaging further optimizes the electrical characteristics of the processor-cache connection. An in-line level-2 1 MB cache chip that has DRAM density contains high-speed SRAM and MCM technology.