A 1 MB, 100 MHz integrated L2 cache memory with 128b interface and ECC protection

G. Giacalone, R. Busch, F. Creed, A. Davidovich, S. Divakaruni, C. Drake, C. Ematrudo, J. Fifield, M. Hodges, W. Howell, P. Jenkins, M. Kozyrczak, C. Miller, T. Obremski, C. Reed, G. Rohrbaugh, M. Vincent, T. von Reyn, J. Zimmerman
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引用次数: 14

Abstract

Several cache-DRAMs have been reported, but all require multiple chips to implement an L2 cache system. The advent of 20 ns, 16 Mb DRAM technology has made a high-speed single-chip 1MB cache possible, replacing multiple SRAM and logic modules, saving board space and reducing power. Multichip-module (MCM) packaging further optimizes the electrical characteristics of the processor-cache connection. An in-line level-2 1 MB cache chip that has DRAM density contains high-speed SRAM and MCM technology.
1mb, 100mhz集成L2缓存存储器,128b接口和ECC保护
已经报道了几种缓存dram,但都需要多个芯片来实现二级缓存系统。20ns, 16mb DRAM技术的出现使得高速单芯片1MB缓存成为可能,取代了多个SRAM和逻辑模块,节省了电路板空间并降低了功耗。多芯片模块(MCM)封装进一步优化了处理器-缓存连接的电气特性。具有DRAM密度的内联2级1mb高速缓存芯片包含高速SRAM和MCM技术。
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