Zaffar Hayat Nawaz Khan, Danial Khan, Nabeel Ahmad, Hamed Abbasizadeh, Syed Asmat Ali Shah, Young Jun Park, Kangyoon Lee
{"title":"6-Parallel RF energy harvesting rectifier with high power conversion efficiency (PCE) for 5.8GHz 3W wireless power transfer","authors":"Zaffar Hayat Nawaz Khan, Danial Khan, Nabeel Ahmad, Hamed Abbasizadeh, Syed Asmat Ali Shah, Young Jun Park, Kangyoon Lee","doi":"10.1109/ISOCC.2017.8368855","DOIUrl":null,"url":null,"abstract":"This paper presents a 6-parallel RF-DC Energy Harvesting (EH) Rectifier with Dickson Charge Pump Structure. The 6-parallel RF-DC EH Rectifier is used and receives a total power of 3W, 500mW by each stage. This parallel structure reduces the voltage that the devices must withstand to avoid limiting their operation due to device characteristics. Proposed RF EH Rectifier is designed with an 180nm BCD process and achieves maximum power conversion efficiency (PCE) of 85.51 percent at 3W input power while delivering an output DC voltage of 11.32V to 50-ohm load resistance.","PeriodicalId":248826,"journal":{"name":"2017 International SoC Design Conference (ISOCC)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International SoC Design Conference (ISOCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISOCC.2017.8368855","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
This paper presents a 6-parallel RF-DC Energy Harvesting (EH) Rectifier with Dickson Charge Pump Structure. The 6-parallel RF-DC EH Rectifier is used and receives a total power of 3W, 500mW by each stage. This parallel structure reduces the voltage that the devices must withstand to avoid limiting their operation due to device characteristics. Proposed RF EH Rectifier is designed with an 180nm BCD process and achieves maximum power conversion efficiency (PCE) of 85.51 percent at 3W input power while delivering an output DC voltage of 11.32V to 50-ohm load resistance.