Comparison of two High-Frequency Noise Characterization Methods for SiGe HBTs

Abstract

The high-frequency (HF) noise properties of devices fabricated in a 60 GHz fT SiGe HBT process have been investigated, using a recently developed approach based on direct y-parameter measurements. The results were compared to conventional noise figure measurements and good agreement was observed between the two methods. The accuracy of the noise parameters was improved and the measurement time was greatly reduced by using direct y-parameter measurements. Furthermore, the method enabled an analysis of the relative contributions of the different noise sources as a function of bias and frequency.