CMOS-Compatible Surface-Micromachined Test Structure for Determination of Thermal Conductivity of Thin Film Materials based on Seebeck Effect

Z. Wang, P. Fiorini, C. van Hoof
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引用次数: 3

Abstract

This paper reports the design, modeling, fabrication and measurement of a CMOS-compatible surface-micromachined test structure for the determination of the thermal conductivity of thin films based on the Seebeck effect. The Seebeck effect-based temperature sensing is more advantageous for thin film materials with a relatively large Seebeck coefficient, such as lightly doped poly-Si and poly-SiGe. In this paper, the conceptual design is first analyzed and then verified with finite element modeling. The test structure is fabricated with poly-Si70% Ge30%. Its functionality is demonstrated from experimental results. The sources of the measurement error are discussed and the solutions to minimize the measurement error are proposed.
基于塞贝克效应的薄膜材料热导率测定的cmos兼容表面微加工测试结构
本文报道了基于塞贝克效应测定薄膜热导率的cmos兼容表面微加工测试结构的设计、建模、制造和测量。对于塞贝克系数较大的薄膜材料,如轻掺杂的poly-Si和poly-SiGe,基于塞贝克效应的温度传感更为有利。本文首先对概念设计进行了分析,然后进行了有限元建模验证。测试结构由聚si70 % Ge30%制成。实验结果证明了其功能。讨论了测量误差的来源,并提出了减小测量误差的方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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