The effects of post-annealing on pulse laser deposition of Zr0.8Sn0.2TiO4thin film on Si(100)

Abstract

We demonstrate the pulse laser deposition (PLD) of zirconium tin titanium oxide (Zr0.8,Sn0.2)TiO4 (ZST) thin film on p-type Si (100)substrate by KrF excimer laser at room temperature, and the study of the effects of post-annealing to the optical and dielectric properties of the deposited ZST thin films. Deposition rate of ZST thin film at 0.3 Angstrom/pulse has been achieved with laser fluences of 1500 mJ/cm2. Raman spectroscopy, X-ray diffraction (XRD), and scanning electron microscopy (SEM) are used to study the effect of the crystalline properties of the deposited films on process parameters; such as laser fluence and annealing temperature. In addition, UV-Vis spectroscopy is used to characterize the optical properties of the deposited ZST films.