Low leakage design of LUT-based FPGAs

Andrea Lodi, L. Ciccarelli, D. Loparco, R. Canegallo, R. Guerrieri
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引用次数: 15

Abstract

Moving to the 90nm node and below, in FPGA architectures, where there's a large number of inactive transistors, power consumption due to subthreshold current becomes more and more relevant compared with the switching one. In this paper we analyze the leakage current associated to look up tables, the basic elaboration units of LUT-based FPGAs, giving a characterization in terms of timing performance, inactive and active leakage power consumption. We propose a circuit implementation to reduce leakage, avoiding delay and silicon area increase. The adopted solutions are based on multi-threshold and self reverse biasing techniques. As results we reduce the inactive leakage power by 88%, the active one by 64%, having 5% delay degradation and a negligible silicon area increase.
基于lut的fpga低泄漏设计
在90nm及以下节点,在FPGA架构中,存在大量非活动晶体管,与开关相比,亚阈值电流导致的功耗变得越来越重要。在本文中,我们分析了与漏电流相关的查找表,这是基于lut的fpga的基本阐述单元,从时序性能,非活动和有源泄漏功耗方面进行了表征。我们提出了一个电路实现,以减少泄漏,避免延迟和硅面积增加。所采用的解决方案是基于多阈值和自反向偏置技术。结果表明,无功泄漏功率降低88%,有功泄漏功率降低64%,延迟退化5%,硅面积增加可忽略不计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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