Impact of memory cell array bridges on the faulty behavior in embedded DRAMs

Z. Al-Ars, A. V. Goor
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引用次数: 21

Abstract

Establishing functional faults, based on defect injection and circuit simulation, has become an important method in understanding faulty memory behavior and in improving memory tests. In this paper this approach is used to study the effects of bridges on the faulty behavior of embedded DRAM (eDRAM) devices. The paper applies the new approach of fault primitives to perform this analysis. The analysis shows the existence of previously defined memory fault models, and (re)establishes new ones. The paper also investigates the concept of dynamic faulty behavior and establishes its importance for memory devices.
存储单元阵列桥接对嵌入式dram故障行为的影响
基于缺陷注入和电路仿真建立功能故障,已成为理解故障记忆行为和改进记忆测试的重要方法。本文采用该方法研究了电桥对嵌入式DRAM (eDRAM)器件故障行为的影响。本文采用故障原语的新方法进行分析。分析表明,已有的内存故障模型是存在的,并(重新)建立了新的内存故障模型。本文还研究了动态故障行为的概念,并确定了动态故障行为对存储器件的重要性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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