Analysis on the Avalanche Ruggedness of Finger Type and Stripe Type LDMOS Transistor

Abstract

In order to investigate how to change avalanche ruggedness according to layout type in LDMOS, the two types of structure such as finger type and stripe type were investigated. The difference of the avalanche ruggedness is due to inductor voltage difference caused by body-pinch resistance and the inductor voltage difference affects the ratio of Emax (reverse maximum holding energy of device) variation to load inductance (L) variation (= Emax / L). In this paper, we describe in detail how to optimize the layout type of LDMOS according to their load inductance (L).