Interplay between charge trapping and polarization switching in MFDM stacks evidenced by frequency-dependent measurements

Abstract

Experimental analysis of polarization switching in metal-ferroelectric- metal and metal- ferroelectric-dielectric-metal junctions is reported. Combined GIXRD and electrical analyses demonstrate that insertion of $\mathrm{A}1_{2}\mathrm{O}_{3}$ dielectric layer boosts the ferroelectric polarization. Ferroelectric switching measurements at various frequencies show that the injection and trapping of charges into the ferroelectric-dielectric stack have a large influence on the polarization switching.